MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
虽然输入偏置电流是这种误差的常见来源，但是外电路产生的电流在源电阻上形成的电压降也能引起误差。
Although input bias current is a common source of this type of error, currents generated by external circuits can also result in errors due to voltage drops across the source resistance.
虽然输入偏置电流是这种误差的常见来源，但是外电路产生的电流在源电阻上形成的电压降也能引起误差。
Although input bias current is a common source of this type of error, currents generated by external circuits can also result in errors due to voltage drops across the source resistance.
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