用X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。
Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
单晶，衬底，光电子，薄膜，外延。
Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.
液滴外延生长半导体材料是一种较为新颖的MBE生长技术，而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。
Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明结合了毛细吸引力、自组装技术，以及基于一维沟槽衬底的胶体外延法。
The invention is combined with the capillary force, a self-assembly art and a colloid extension method based on one dimensional groove substrate.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
主要是随着衬底尺寸的增长，外延层的厚度、电阻率均匀性无法满足要求。
With large size wafer, the uniformity of thickness & Resistivity was out of control line.
而在大面积低质量衬底上实现效率高达14.7%。这一成果表明了薄膜外延太阳能电池工业化生产的潜力。
And efficiencies of up to 14.7% were achieved on large-area low-quality substrates, showing the potential of thin-film epitaxial solar cells for industrial manufacturing.
而在大面积低质量衬底上实现效率高达14.7%。这一成果表明了薄膜外延太阳能电池工业化生产的潜力。
And efficiencies of up to 14.7% were achieved on large-area low-quality substrates, showing the potential of thin-film epitaxial solar cells for industrial manufacturing.
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