这个弯曲在反应标记上产生负电压，其反过来为晶体管的基极供电。
This flexing generates a negative potential at the feedback tab, which feeds back to the base of the transistor.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
由于Q2的基极-发射极的电压为0V而截止，因此没有负载电流流过r6。
Consequently, no load current flows through R6 because Q2, whose base-emitter voltage is now 0v, has turned off.
当iload超过最大允许值时发生过载情况，R6上的电压增大导致基极-发射极电压足够大到导通Q2。
In the event of an overload when ILOAD exceeds its maximum permissible value, the increase in voltage across R6 results in sufficient base-emitter voltage to turn on Q2.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
特点：基极-发射极间内置电阻，高电压。
特点：基极-发射极间内置电阻，高电压。
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