本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。
Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
不过，他表示，可以利用类似的技术实现硅片所无法做到的，比如，制造能检测传染病的智能型绷带，或者能感应食品是否新鲜的包装。
But similar technology could be used to do things silicon can't do, he says, such as make smart bandages that can sense infections or freshness-sensing food packaging.
硅片上安装着混合扭曲向列型和双折射液晶盒。
The silicon panel was assembled with a mixed twisted nematic and birefringence liquid crystal cell.
在通过硅片时，光线被束缚成一个S型的路线并通过液珠显示出来。
Light moving through the silicon was then constrained to the S-shaped path marked out by the drops.
回收型电池是利用回收半导体工业硅片为原材料的太阳能电池，而普通型电池则是利用太阳能级硅片制作的太阳能电池。
The conventional model is using recycled silicon chip of semi-conductor industry, and the conventional model is using solar energy silicon plate.
铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。
The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer.
铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。
The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer.
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