上述各种概念都反映在结型晶体管中。
The concepts described above are embodied in the junction transistor.
本文讨论面结型晶体管变频性能的分析。
This paper describes a detailed analysis of conversion properties of junction transistors.
六十年代集成电路市场主要为双极型晶体管。
In the 1960s the IC market was broadly on bipolar transistors.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
在供应电压与耗乏型晶体管之间可设置一个二极管。
A diode can be arranged between the supply voltage and the depleted type transistor.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
不过，英特尔公司拥有大量聪明人，他们有能力发明使用新材料的单极型晶体管”。
But there are a lot of smart people at Intel and they were able to reinvent the CMOS transistor using new materials.
本发明公开了一种基于有机半导体材料的高放大倍率的垂直型晶体管。
The invention discloses a vertical transistor with high magnification based on organic semiconductor materials.
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
在串联型晶体管稳压电路中，集电极电阻有内部电源和外部电源两种供电方式。
There are two kinds of supply modes of collecting electrode resistance (inner and outer) in the voltage-steadied circuit in which series connection transistor is used.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。
The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.
其与非门电路不仅全部由npn型晶体管构成，且结构非常简单，容易做成集成电路。
Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate circuit.
研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
你可以使用一个便宜的npn型晶体管，比如2n2222，放大该脉冲到后续电子元件的接口。
You can use a cheap NPN transistor such as a 2n2222 to amplify this pulse, to interface with the next stage of electronics.
针对手工焊条电弧焊(MMA)弧焊过程特点，建立了绝缘栅型晶体管逆变式弧焊电源控制系统。
Based on the characteristics of MMA welding process, a new control system of IGBT inverter arc welding power source is developed.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
MOSFET的晶体管一直很受欢迎，在此应用程序，因为它fullfils双方的要求，更好的话，双极型晶体管。
The Mosfet transistor has been very popular in this application as it fullfils both requirements better then the bipolar transistor.
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
他们展示了一个由红、绿、蓝量子点制成的实验型量子点显示屏，由一个特殊的晶体管阵列进行供电和控制。
They demonstrated an experimental quantum-dot display made of strips of red, green and blue dots on an array of special transistors that powered and controlled them.
由日本电气公司(NEC)研制的，这个鼓型的机器是日本最早的晶体管计算机之一。
Manufactured by the Nippon Electric Company (NEC), the drum-based machine was one of the earliest transistorized Japanese computers.
索尼选择了针对从没有过收音机的青少年全体出售其迷你型的晶体管收音机，因为他们买不起台式的RCA。
Sony chose to sell its tinny little transistor radio to teenagers who had never had a radio because they couldn't afford a tabletop RCA model.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
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