本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
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