研究了基于场效应晶体管的DNA传感器。
本发明应用于提高场效应晶体管的制造效率。
The invention is applied to improving the manufacture efficiency of the field effect transistor.
场效应晶体管以及制造场效应晶体管的方法。
A field effect transistor and a method of fabricating the field effect transistor.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法。
Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
根据对碳纳米管场效应晶体管的电学特性的研究，搭建出一套简单的测试系统，对制备的器件进行了初步测试。
A simple test system has been prepared to test the carbon nanotube field effect transistors, base on the electrical properties.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。
For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。
Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
本发明提供一种以碳纳米管为电极的场效应晶体管器件及其制备方法。
The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
然而，有机场效应晶体管性能的快速进步，主要得益于新型有机半导体材料方面的研究进展。
However, the rapid improvements of OFET's performances mostly profit from research achievements in new organic semiconductor materials.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
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