高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。
Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本文在分析文氏振荡电路的基础上，提出一种利用场效应管线性工作区实现稳幅的技术，同时给出了具有温度补偿环节的实际应用电路。
This paper presents a technology of high stability sine-wave generator by FET based on the analyses of Wen's oscillating bridge. A practical circuit with temperature compensation is introduced.
例如，通过运用微细加工技术来制造计算机芯片时，工作小组创造出了一种场效应晶体管，它是计算机中一个重要的组成部件。
By employing the standard microfabrication techniques used, for instance, in manufacturing of computer chips, the team has created a type of field-effect transistor, a vital computer component.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
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