并提供了自制四探针测量仪的方法。
四探针测量金属薄膜电阻率是当今微电子技术领域中常用的方法。
A measurement of resistivity of metal film using four-point probe technique can be used as the general physics experiment.
测量的结果表明，利用单探针测量的主等离子体边缘参数与朗缪尔四探针测量结果基本一致。
The results obtained show that radial profiles of the temperature and the density measured with the single probe are in agreement to those with a four-probe system.
图4 -47是四点同线探针用于电阻率测量的配置图。
Figure 4-47 is a diagram of four - point collinear probe setup for resistivity measurements.
图4 -47是四点同线探针用于电阻率测量的配置图。
Figure 4-47 is a diagram of four-point collinear probe setup for resistivity measurements.
本文考虑到接触面积大小的影响，并让四根探针排列成任意形状，导出了测量电阻率和薄层电阻的关系式。
In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary.
木文对此进行了分析，并提出了一种采用定向耦合器和四探针的混合系统来提高测量精度。
The problem is analysed and the results are given. As a solution a mixed system composed of directional coupler and four probes are proposed to improve the measurement accuracy.
基于四探针电阻率测量技术，依据试验测得的混凝土表观电阻率变化确定裂缝位置。
The location of the crack can be found by the change of the apparent resistivity, based on four-probe electrical resistivity measuring technique.
本文对此进行了分析，并提出了一种采用定向耦合器和四探针的混合系统来提高测量精度。
The problem is analysed and the results are given. As a solution a mixed sys tem composed of directional coupler and four probes are proposed to improve the measurement accuracy.
本文提出一种用直线四探针头测量金属-半导体欧姆接触接触电阻率的简捷方法。
In this paper, a simple method to measure the specific contact resistance of metal-semiconductor ohmic contact is developed, using the probe heads of the inline four probes.
与四点同线探针法一样，如果样品电阻和电压表的绝缘电阻（电压表的公共端到地）是同一数量级的，就可能需要使用差分测量。
As with the four-point collinear probe method, a differential measurement may be required if the sample resistance is of the same magnitude as the isolation (meter common to ground) of the voltmeter.
测量电阻率的四探针法公式中，要求是点接触而且探针的排列有一定的形状。
The equation of four probes method for resistivity measurement requires point contacts and a definite configuration of probes array.
本文介绍用四探针技术测量半导体薄层电阻的新方案。
A new method for measuring sheet resistance of semiconductor using four-point probe has been developed.
四探针法测量了薄膜电性能，薄膜电阻率平均变化达到103，比理论上只相差一个数量级；
The ratio of resistance change is tested using Four Probes Method. The average change reaches 103, and is near to 104 of the theory estimation.
采用排水法测试试样密度，利用SEM和EDX分析微观结构和元素组成，采用四探针法测量电阻率。
Density of the fired specimens was determined. Microstructure and element composition were examined by SEM and EDX.
采用排水法测试试样密度，利用SEM和EDX分析微观结构和元素组成，采用四探针法测量电阻率。
Density of the fired specimens was determined. Microstructure and element composition were examined by SEM and EDX.
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