本文介绍用四探针技术测量半导体薄层电阻的新方案。
A new method for measuring sheet resistance of semiconductor using four-point probe has been developed.
本论文依据四探针法的基本原理并结合双脉冲技术，设计并制造适用于薄膜温差电材料的电阻率测试系统。
The thin film TE material resistivity measurement system which is designed in the thesis bases on the principle of four-probe method and double pulse technology.
基于四探针电阻率测量技术，依据试验测得的混凝土表观电阻率变化确定裂缝位置。
The location of the crack can be found by the change of the apparent resistivity, based on four-probe electrical resistivity measuring technique.
四探针测量金属薄膜电阻率是当今微电子技术领域中常用的方法。
A measurement of resistivity of metal film using four-point probe technique can be used as the general physics experiment.
四探针测量金属薄膜电阻率是当今微电子技术领域中常用的方法。
A measurement of resistivity of metal film using four-point probe technique can be used as the general physics experiment.
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