该器件采用三相结构，埋沟和四层多晶硅技术。

The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.

youdao

该器件采用三相结构，埋沟和四层多晶硅技术。

The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.

youdao