文中提出等效噪声功率谱密度的概念。
The concept of "equivalent noisy power spectral density" is introduced in this paper.
本文给出了频标放大器输出级相位噪声功率谱密度的公式。
A formula of phase spectrum density for transistorized amplifier is given.
比较了纯PN结雪崩二极管和带有隧道穿透的PN结雪崩二极管的噪声功率谱密度。
The spectral noise power density of pure avalanche diodes is compared with that of avalanche the diodes with tunneling penetration.
这表明相位噪声功率谱密度随外腔长度而周期性地漂移，且功率谱密度的峰值随外部反馈耦合率而发生很大的变化。
It is shown that the phase noise spectrum density shift periodicity with the length of external cavity and the peak value of power spectrum density varies considerably with the feedback coupling rate.
这表明相位噪声功率谱密度随外腔长度而周期性地漂移，且功率谱密度的峰值随外部反馈耦合率而发生很大的变化。
It is shown that the phase noise spectrum density shift periodicity with the length of external cavity and the peak value of power spectrum density varies considerably with the feedback coupling rate.
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