不同型号的晶体管的V_F不同是由于掺杂浓度不同导致的禁带宽度不同。
The difference of V_F of different transistors is because of the difference of band gap caused by the difference of the doping concentration.
不同型号的晶体管的V_F不同是由于掺杂浓度不同导致的禁带宽度不同。
The difference of V_F of different transistors is because of the difference of band gap caused by the difference of the doping concentration.
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