本论文主要研究声子频率和掺杂点缺陷浓度对同位素掺杂硅声子散射的影响。
This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.
本论文主要研究声子频率和掺杂点缺陷浓度对同位素掺杂硅声子散射的影响。
This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.
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