本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。
The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
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