通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
探讨了施主杂质、受主杂质等微量元素及玻璃料对PT C陶瓷性能的影响。
Effects of donors, acceptors, and other trace elements and the frit on properties of the PTC ceramics are discussed.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
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