通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
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