这种结构还可以构成横向光晶体管，共发射极电流增益为2 ~4倍。
Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
结果表明该电阻与光敏区面积、发射区边长、发射区位置、发射极电流等因素有关。
Results show that the resistance relates to the area of the photo-excited region, the side length of the emitter region, the position of the emitter region, and the emitter current.
于是，只要我们能让晶体管的发射极电流保持恒定，它就能保持发射极电流为恒定值。
Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
另一个是如何提高发射极发射电流的有效面积。
One of the commonly used methods to reduce this fall-off is by increasing the emitter area.
第五步：调末级功率管的静态电流，该电流值可以经由过程测功率管的发射极电阻的电压换算而得到。
Step five: tune the final stage power transistor quiescent current, the current value of the power tube by measuring the voltage of the emitter resistance Converter and get.
在最佳工作条件下，给出了集电极电流和集电极——发射极电压波形。
The waveforms of the collector current and collector-emitter voltage are also determined under the optimum operation condition.
特点：集电极-发射极饱和压降低，电流大。
由于Q2的基极-发射极的电压为0V而截止，因此没有负载电流流过r6。
Consequently, no load current flows through R6 because Q2, whose base-emitter voltage is now 0v, has turned off.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
R3限制电容器C3的充电电流，由此在电容器C3上存在受限的dV／dt，并且因此在连接到IGBT发射极的电容器C4上也存在受限的dV／dt。
R3 limits the charging current of capacitor C3, so that a limited dV/dt exists on capacitor C3 and by consequence also on capacitor C4 which is connected to the IGBT-emitter.
R3限制电容器C3的充电电流，由此在电容器C3上存在受限的dV／dt，并且因此在连接到IGBT发射极的电容器C4上也存在受限的dV／dt。
R3 limits the charging current of capacitor C3, so that a limited dV/dt exists on capacitor C3 and by consequence also on capacitor C4 which is connected to the IGBT-emitter.
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