长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
第五步：调末级功率管的静态电流，该电流值可以经由过程测功率管的发射极电阻的电压换算而得到。
Step five: tune the final stage power transistor quiescent current, the current value of the power tube by measuring the voltage of the emitter resistance Converter and get.
在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性。
Base emitter metal self aligning, air bridge, and wafer thinning are used to improve microwave power performance.
在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性。
Base emitter metal self aligning, air bridge, and wafer thinning are used to improve microwave power performance.
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