化学腐蚀形成台面提高反向击穿电压；
Using chemical mesa etching to increase the breakdown voltage.
结果表明，退火处理可以显著提高器件反向击穿电压。
The results indicate that annealing treatment can heighten breakdown voltage of SBD remarkably.
实验表明，退火后样品的微观结构有利于提高反向击穿电压。
The experiments show that the microstructure of annealed sample is favourable to improving reverse breakdown voltage.
源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
但就制备高反向击穿电压的微波pin二极管而言，这些工艺已不能满足要求。
But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。
Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
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