APD的增益可以由反向偏置电压的幅度来控制。
The gain of the APD can be controlled by the magnitude of the reverse bias voltage.
黑线表示没有偏压，红线表示有一个反向偏置电压。
Black lines are without external bias and red lines are with and external reverse bias voltage.
其中Uoff在断态时的反向偏置电压，ir是流过开关的反向漏电流。
The Usoff and Ir are respectively the reverse bias voltage in the off-state and the reverse current through the switch.
当施加反向偏置电压时，形成的耗尽层厚度变大，从而使热载流子的产生减到最小。
When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
测量APD的反向偏置电流需要一种能够在很宽范围内测量电流并且能输出扫描电压的仪器。
Measuring the reverse bias current of an APD requires an instrument that can measure current over a wide range as well as output a voltage sweep.
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
这些误差来源包括偏置电压、噪声和共模电流以及反向误差。
These error sources include offset voltages, noise and common-mode current, and reversal errors.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
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