结果门脉高压胃病组与肝炎后肝硬化组和对照组相比较，拟杆菌、双歧杆菌显著减少；而肠杆菌科细菌、酵母菌显著增加。
However, the number of fecal enterobacteriaceae and yeasts in portal hypertensive gastropathy group was significantly increased compared with that of control group and cirrhosis group.
将双旗山金矿矿化类型划分为石英脉型和蚀变岩型。
The mineralization type of Shaungqishan gold deposit has been divided into quartz vein and alteration type.
目的评价双导丝球囊在冠脉支架内再狭窄治疗中的的安全性和疗效。
Objective To assess the safety and therapeutical efficiency of dual-wire balloon using in treating coronary artery in-stent restenosis.
重点介绍微球与双侧向、声波、伽马、3506脉码、微电极（3104）组合测井中各种信号的传输、采集方法，刻度管理。
It also focuses on the signal transmission, acquisition and calibration procedure of MSFL and DLL, AC, GR, 3506PCM, ML(3104) combination logging.
组冠脉造影正常，双密达莫药物负荷试验阴性6例。
GC normal coronary artery and negative drug test in 6 cases.
全部病例均采用螺旋CT动、门脉双期增强扫描。
Standard hepatic dual-phase contrast-enhanced CT scanning was performed for all patients.
L 297芯片产生脉宽可调的脉冲相序信号，该信号作为双极性桥式功率驱动电路的输入信号，放大后驱动步进电机。
L297 chip generates pulse phase sequence signals of which the pulse width is adjustable. The signals are the input ones of dual bridge driving circuit and drive the stepper motor after amplification.
双侧冠脉造影组患者的介入治疗成功率优于单侧冠脉造影组。
Coronary angiography in patients with bilateral involvement of the treatment success rate of coronary angiography is superior to unilateral group.
目的本研究对150例疑诊冠心病患者双源ct冠脉图像进行回顾性分析，探讨图像质量的影响因素和改善措施。
Objective to investigate the influencing factors on image quality of dual source ct coronary angiography by retrospective analysis of the images of 150 patients with suspected coronary artery disease.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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