在钟形双脉冲激励下，观察了DH激光器的电荷存储效应。
The charge storage in DH laser driven by pairs of bell-shape pulse current has been investigated.
该电路的模拟部分包括电荷放大器、后级放大电器、相关双取样与采样保持电路、积分器、单位增益缓冲器。
The analog part includes self-test circuit, charge amplifier, post-amplifier circuit, CDS and S/H circuit, integrator, unity gain buffer.
根据细胞双电层模型和电学原理，推出了圆筒型植物细胞膜上电荷产生的细胞内压力的计算公式。
A formula about cellular pressure produced by the electricity on the plant cell membrane was deduced by the double electrical layer model of cell membrane and electrical theory.
基于电荷离散化的事实，运用最小平移算符的性质，计算介观金属双环系统中电荷、电流以及能量的量子涨落，研究影响量子涨落的因素。
On the basis of the charge discreteness, the quantum fluctuations fo the charge, current and energy in the mesoscopic metal dual rings are calculated by the minimum shift operator.
分子基态与电荷转移态的电荷转移过程定性地解释了双光子聚合反应的聚合机理。
The charge_transfer process for the charge_transfer states is displayed, and then the mechanism of photopolymerization is discussed qualitatively.
用双能级模型以及与电荷无关的核子-核子相互作用研究核形变随Z，N的变化，得到了与实验大体相符的结果。
The variation of nuclear deformations with Z, N is studied with a two-level model with charge independent nucleon-nucleon interactions. Results obtained agree fairly well with observed ones.
放电为磁场激励型，稳定的等离子体由电磁场所维持，空间电荷产生的静电场引起荷电粒子的双极扩散。
A steady state plasma is maintained by electromagnetic field and ambipolar diffusion of charged particles is caused by electrostatic field of space charge.
当去除1/4波片2和3时，则能够测量电子电荷的双极扩散常数和迁移率。
When 1/4 wave plate 2 and 3 are removed, the ambipolar diffusion constant and mobility of electron charge can be measured.
通过测量不同反应通道的动能释放，推测出了双电荷离子解反应过渡状态的结构。
Several different structures of transition states were postulated by measuring the translational energy releases of different charge separation channels of the doubly charged ions.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
应用推荐