每个器件都有一个八位CMOS移位寄存器和CMOS控制电路，八个CMOS数据锁存，八个双极电流吸收达林顿输出驱动器。
Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
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