每个器件都有一个八位CMOS移位寄存器和CMOS控制电路，八个CMOS数据锁存，八个双极电流吸收达林顿输出驱动器。
Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.
在引入了跨导线性原理后，利用混合跨导线性回路完成了对电压跟随器的设计，进而得到了双极管型电流控制传送器。
After introduction of the tranlinear loop principal, the BJT current controlled conveyor has been designed by using mixed tranlinear loop voltage follower.
双凸极永磁电机的功率控制器通常采用电流滞环斩波控制。
Hysteretic current PWM control is often used in doubly salient permanent magnet motor drive.
采用双极调制方式单周控制APF补偿后的电源电流中存在直流分量。
There are DC off-sets in the compensated source current of the APF with one-cycle control under bipolar modulation.
对于后备保护装置防止高阻抗接地故障，将配置一只双极方向过电流继电器，同瞬时跳闸附件的时间成反比。
For backup protection against high resistive ground faults, there will be a dual polarized directional overcurrent relay, inverse time with instantaneous trip attachment.
针对造成双弧现象的原因，模拟分析了由于电流过大、喷嘴压缩孔径过小和钨极偏心三种因素所导致的双弧现象。
The phenomenon of double arc which is usually caused by the reasons of too big welding current, too small diameter of the nozzle and eccentric of the cathode has been simulated.
采用标准分立双极元件，对双极晶体管瞬态辐射光电流分流补偿法进行了实验验证。
Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method.
本文主要完成了一种基于双极工艺实现的电流型PWM控制器芯片的设计。
This paper research the design to current mode PWM controller IC, it is achieved by bipolar process.
基于PCB平面结构宽带天线，通过推导满足天线边界条件的电流积分方程，利用矩量法对PCB宽带加载天线进行了计算分析，在对计算结果分析的基础上，初步制作了单极和双极PCB加载天线。
A large part of this paper is an analysis of the using of Method Of Moment in PCB wideband planar loaded antenna on the basis of a wideband antenna in PCB planar structure.
此设计利用晶闸管、二极管等器件设计了一个转速、电流双闭环直流晶闸管调速系统。
The design uses thyristors, diodes and other devices designs a speed, current double-loop SCR DC converter system.
用极谱电流法测定BSA还原波的电子数，证实该波为BS A中的两个双硫键还原所致。
It was ascertained that this wave results from reduction of two disulfide bonds of BSA through determining the electron number by polarographic current method.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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