介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
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