本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.
大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.
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