同时，利用无机纳米半导体的光导特性，这种复合体系也可以制成光导与电致发光双功能器件，且其发光效率可有较大幅度提高。
Dual functions can also be achieved with high emission efficiency by benefiting from the photoconduction of the semiconductor nanocrystal and the electroluminescence of the polymer.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
本文介绍了一种双波长智能型半导体激光治疗仪的软、硬件设计。
Describes the hardware structure and software design of a dual-wavelength intelligent semiconductor laser therapeutic instrument.
介绍一种紧凑的、能以较低输入光功率工作的光学双稳器件，由光电检测器、光纤定向耦合器和半导体激光二极管组合而成的。
A compact, low input power optical bistable device, combined with photodetector and optical fiber directional coupler and semiconductor laser diode, was presented.
假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子。
Self-trapped states, such as spin polarons as well as spinless bipolarons are assumed to be the main carriers in organic semiconductors.
该技术能改变双馈风机世界。越来越紧凑的功率半导体技术，能做到两种类型变频器的完美融合。
This technology can change the DFIG technology world because the power Semiconductor technology is getting more compact and this is a perfect combination.
半导体晶片处理。单或双室，25晶圆批量处理提供高晶片清洁，冲洗和脱水功能。
Semiconductor wafer processing. Single or dual chamber, 25-wafer batch processing offers high-performance wafer cleaning, rinsing and drying.
本文描述了测量超导体的交流损耗的新方法——双积分方法的原理、装置和三个样品的测量结果。
This paper describes the new method for a. c loss measurement in superconductor-The principle and device of double integration method and the result of measuring three samples.
目的：观察比较仅行手法治疗、仅行双侧星状神经节半导体激光照射及综合治疗方法对颈源性头痛的疗效。
AIM: to observe the effects of single maneuver therapy, single semiconductor laser exposure on stellate ganglion of the double side and colligation therapy on the headache of cervical origin.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
目的：采用量化指标观察分析双波长半导体激光治疗急慢性疼痛的效果。
Objective: Adopting quantified index to observe and analyze the effect of acute and chronic pain through double-wavelength diode laser.
报道了两个增益开关调制的法布里珀罗半导体激光器互注入锁定实验方案，可产生双波长可调谐光脉冲。
Amutual pulse injection-seeding scheme is developed to generate tunable dual-wavelength optical short pulses by the use of two gain-switched fabry-perot (F-P) semiconductor lasers.
本文提出了一个窄带半导体双光子光学双稳性的稳态理论模型。
The steady state model of two-photon optical bistability in narrow-gap semiconductors are presented.
以可调谐双稳外腔半导体激光器(ECLD)为例，指明了在损耗调制下，扰动近似分析可能会失效。
Taking an external cavity laser diode (ECLD) as an example, calculations indicate that the perturbation analysis may become invalid under loss modulation.
基于法布里珀罗(F P)腔光束干涉理论，建立垂直腔半导体光放大器(VCSOA)的双稳模型。
Based on the beam interferential theory of Fabry-Perot semiconductor laser, a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established.
最后计算了理想导体半圆柱的双站散射截面，结果与矩量法的结果吻合得相当好。
The results obtained by the hybrid method are in good agreement with the results of moment method.
结果表明此类双稳半导体激光器具有很大的双稳范围。
The result shows that there is a wide range of the hysteresis width for this type of bistable laser.
利用解析函数的性质，通过反双曲余弦计算出了由共焦点椭圆导体柱面组成的电容器内电场和单位长度的电容，并对结果作了进一步讨论。
The electric field and capacitance of a confocal elliptic capacitor are calculated by the inverse hyperbolic cosine analytic function, and discussion on them is performed.
研究了半导体非对称双异质结(ADHS)中，极化子的基态性质。
The polaron ground state in asymmetric double heterostructure (ADHS) is studied.
提出了一种基于双波长半导体激光器的DVD光学头方案。
DVD pickup based on dual wavelength integrated laser diode is developed.
本文利用双球面坐标系计算两个带电导体球的相互作用力问题 ，并对结果进行了讨论 。
The interaction of two charged conductor spheres is caculated by using two spherical coordinates, and the result is discussed.
本文描述了测量超导体的交流损耗的双积分法的原理、装置和三个样品的测量结果。
The principle and device of the double integration method for a. c loss measurement in superconductor are described. The measuring results of three samples were given.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
本发明是一种使半导体激光列阵输出双波长的外腔，属于半导体激光器领域。
The invention relates to an external cavity which allows a semiconductor laser array to output double wavelengths and belongs to the field of the semiconductor laser.
利用MOCVD研制了无铝双量子阱列阵半导体激光器。
The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD.
通过双限流电路和浪涌强制吸收或隔离保护电路的设计，解决了大功率半导体激光器驱动电源常见的浪涌冲击和电流恒定的难题。
The double limit current circuit and electronic surge force absorbed or isolated circuit are introduced. The problems of electronic surge strike and current stable are solved.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
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