基于三相自耦变压器和由可控器件IGBT构成的双向开关实现的新型三相vsg，可以方便地控制跌落类型、跌落持续时间、跌落深度和跌落相位。
A novel three-phase VSG is built by three-phase autotransformer and IGBT based bidirectional switch, can easily control the types of voltage sags, sag duration, sag depth and sag phase.
光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件。
The photo-bidirectional negative resistance transistor (PBNRT) is a novel "s" type photoelectric negative resistance device.
比较和分析了四种双向SCR器件的触发电压。
The triggering voltages of four types of dual direction SCRs(DDSCR)are compared and analyzed.
在此实验基础上研制得到一种双向两端S型负阻器件(TBNRD器件).本文还对该器件产生负阻的原因进行了理论分析。
Based on this, a Two-terminal Bidirectional negative resistance Device (TBNRD) is fabricated and the theory of the negative resistance is studied.
在此实验基础上研制得到一种双向两端S型负阻器件(TBNRD器件).本文还对该器件产生负阻的原因进行了理论分析。
Based on this, a Two-terminal Bidirectional negative resistance Device (TBNRD) is fabricated and the theory of the negative resistance is studied.
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