用电化学方法研究了卤素离子引起铁腐蚀的差异。
The differences of corrosion caused by halide ions on iron in alkaline media were studied by electrochemical metheds.
研究了它们在溶液中的荧光被卤素离子猝灭的问题。
The fluorescence quenching of these emissive compounds in solution by halogen anions was studied carefully.
建立一种可同时测定混合卤素离子的电位滴定新方法。
A new double indicator electrodes potentiometric precipitation titration method coupled with multivariate calibration for the simultaneous determination of mixed halide ions was developed.
用电化学测试技术研究了碱性溶液中卤素离子对铁阳极过程的影响。
The influence of halide ions on anodic process of iron in alkaline solutions has been studied by electrochemical techniques.
这种作用可以由卤素离子的吸附阻止无定形水合氧化铁的生成且生成可溶性络离子得到初步解释。
This effect can be explained by the retartation of the formation ofamorphous iron oxide by the adsorption of halide ions and forming soluble iron complexes.
但是奥氏体不锈钢的硬度低、耐磨性差、摩擦系数大；在卤素离子环境下易被腐蚀等弱点限制了它的应用范围。
However, its low hardness and poor wear resistance, as well as a tendency to corroding under the halide ion environment, limit its applications.
采用体声波传感技术就卤素离子与铜缓蚀剂——苯骈三氮唑(BTA)协同成膜的动力学及相应复合膜的稳定性进行了研究。
The growth kinetics and the stability of synergistic films of benzotriazole (BTA) and halide ion (X -) were investigated by bulk acoustic wave (BAW) method.
多卤化物的形成取决于中心卤化物离子与卤素的结合。
The formation of polyhalides depends on the combination of a central halide ion with a halogen.
结果表明，这个类肽能很好地识别卤素负离子，并与其形成1∶1的络合物。
The result showed that 1 binds well with the halide anions, and forms 1:1 stoichiometric complexes.
卤素阴离子能够同煤分子通过酸碱作用而强烈缔合，从而破坏了煤分子的缔合结构，提高了煤在有机溶剂中的抽提率。
Halogenide anions can associate strongly with coal molecules by acid -base interactions, and destruct the associative structure of coal enhancing the extraction yields of coal in organic solvents.
本发明提供了一种对于半导体处理中使用的含卤素等离子体耐腐蚀的陶 瓷制品。
Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas.
本发明提供了一种对于半导体处理中使用的含卤素等离子体耐腐蚀的陶 瓷制品。
Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas.
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