采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
分析能对从完整单晶膜和多晶膜到非晶膜的所有材料进行。
Analysis can be performed across the whole materials from perfect single crystals and polycrystals to amorphous materials.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
The measurements of XRD, SEM and XPS show that the as - grown BNN film is epitaxial single crystal with smooth surface.
这主要得益于它采用了单晶硅膜的SOI结构。
These benefit from the SOI Monocrystal silicon structure it possesses.
在金刚石的(100)，(110)和(111)面上分别获得了单晶金刚石膜和金刚石多晶粒子。
Epitaxial diamond films and polycrystalline diamond grain were obtained on (100), (110) and (111) surface of synthesized single-crystal diamond substrates.
根据模拟结果并结合单晶硅材料和SOI结构的特点，设计出了矩形应力膜单晶硅soi高温压力传感器芯片。
According to the result of simulation and characteristic of monocrystalline silicon SOI structure, a novel high temperature SOI pressure sensor with a rectangle diaphragm was designed.
本发明仍应用硅单晶做弹性膜材质。
SSC as material of elastic membrane is adopted in the invention.
所制得的多层膜由一层单晶纳米片所组成的表面多孔层和一层或多层数目不等的底部非晶层组成。
The as-prepared film consists of a porous surface layer which was composed of many single crystal nanosheets, and one or more amorphous bottom layers.
在此提供了一种闪烁体晶体以及用于生长闪烁体晶体的一种方法，该晶体包括一种生成态的限边送膜生长(efg)的单晶体。
A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal.
利用非平衡磁控溅射技术在单晶硅基底上沉积了类石墨非晶碳膜。
Graphitelike carbon film was deposited on silicon substrates by unbalanced magnetron sputtering.
利用非平衡磁控溅射技术在单晶硅基底上沉积了类石墨非晶碳膜。
Graphitelike carbon film was deposited on silicon substrates by unbalanced magnetron sputtering.
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