用定向凝固技术制作单晶铸件；摸索合理可行的工艺方法；分析晶粒生长淘汰过程。
Single-crystal casts are obtained with the technology of directional solidification, the reasonable technique is discussed and the growing process of single crystal is analyzed.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
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