利用降温法生长掺尿素的UTGS单晶，测试了晶体的热释电和介电特性。结果表明，尿素的掺杂提高了晶体的热释电性能。
TGS crystals doped with urea have been grown from aqueous solution. The pyroelectric properties of UTGS crystals are determined. The results show that UTGS has better pyroelectric properties.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
采用直拉法研制了大直径红外光学锗单晶，测量了其光学性能和力学性能。
Major diameter infrared optical Ge Monocrystal was developed by direct pulling method. The optical and mechanical properties were measured.
测定了四水硝酸镉（CNT）溶解度曲线，采用降温法培养出CNT单晶。
The solubility curve for cadmium nitrate tetrahydrate (CNT) has been ditermined. the CNT crystal can be grown by slow cooling solution technique.
采用改进的升华法在氮气环境下制备氮化铝单晶体。
AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere.
热压法、P VD、CVD制备的多晶材料日趋完善，在一些领域已取代单晶材料。
The performance of polycrystalline material manufactured by using Hot-pressed forming method, PVD and CVD is becoming perfect and has replaced monocrystalline material in some fields.
用溶剂自然挥发法培养了五个单晶，并采用CCD 单晶衍射仪测定了它们的晶体结构。
Five crystal structures are determined by CCD diffractometer after the single crystals were grown by slow evaporation at room temperature.
用常规化学腐蚀法显示出单晶硅中的缺陷，观察典型的位错。
By using the routine chemical corrosion, show the defect of the Monocrystalline Silicon; find the typical linear deranged.
本文用晶体区熔生长理论对激光加热基座法生长的单晶光纤形状稳定问题作了研究。
In the paper, the shape stability of single crystal fibers grown by laser heating float zone growth method is studied with zone melt growth theory.
根据盐酸大观霉素的溶解度特性，采用自然冷却法培养出单晶。
Single crystal of spectinomycin dihydrochloride was cultivated by natural cooling method according to its characteristic of solubility.
用新的溶剂变更法生长TGS单晶，即在TGS水溶液中缓慢加入无水乙醇而使TGS结晶析出。
TGS single crystals can be grown by the method of changing solvent, i. e. , adding ethyl alcohol to the aqueous solution of TGS.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
自动直径控制(adc)是直拉法单晶制造中的重要环节。
Automatic diameter control (ADC) is an important procedure in the Czochralski pulling.
介绍了一种用于稀土金属提纯的单晶炉，根据区熔法提纯单晶的特殊工艺要求，分析了其主要结构及特点。
It is introduced a puller applied to purification of rare earth (RE) material, according to the float zone (FZ) technics of crystal growing, interprets main structure and characteristic of the puller.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
用高温高压温度梯度法作为实验手段来生长优质宝石级金刚石单晶。
Large synthetic diamond was grown by temperature gradient method (TGM) under HPHT.
本文介绍了一种基于激光基座加热法的单晶光纤拉制系统，并对其光学系统进行了仿真，实验，验证了系统的优越性。
The paper proposes a drawing single crystal fiber system based the method of base heated by laser and the simulation of the system. The experiment proves the advantages of the system.
传感器敏感元件主体结构采用单晶硅的法布里帕罗标准具，并通过光纤与发光二极管和光电探测器等光学元件相连。
Sensor element, which consists of a Fabry-Perot etalon fabricated from single-crystal silicon, connects with the LED and detector by fibers.
本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程。
An analysis for the growth process of PbI2 single crystal by bridgman method has been made.
使用机械 -化学抛光法加工大尺寸单晶硅可获超光滑表面 ，但很难保证良好的面型。
In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.
高压温度梯度法是一种有效的合成宝石级金刚石单晶的方法。
HPHT gradient temperature method is an effective technique to grow gem diamonds.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
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