根据电荷算符满足的非线性运动方程，在各单元能量基上，精确地计算了能谱。
By using a nonlinear equation satisfied the charge operator, the spectrum is calculated exactly in energy basis for each cell.
为了获得更加稳定的系统，在电荷泵中设计了结构简单的电流单元用于补偿额外的参数变化，并采用线性压控增益的VCO来减小参数的变化。
Furthermore, a simple adjustable current cell in the charge pump is proposed for additional stability compensation and a novel VCO with linear gain is adopted to limit the total variation.
研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。
It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.
电化学测试结果表明由于噻吩单元的引入，卟啉聚合物和小分子染料的能隙都降低了，从而有利于电荷的注入和传输。
Electrochemical measurement displayed that the band gaps of the polymers as well as porphyrin dyes were reduced by introducing thiophene units, thus improved the charge mobility.
每一单元储存不多于一个单一电荷储存状态。
Each cell stores no more than a single charge storage state.
本发明能够很容易地积累壁电荷，并且与以往急剧增加和减少的波形供给相比，提高了放电单元的应答速度。
The invention could accumulate the wall electric charge easily, and improve the responding speed of discharging unit comparing with the ancient rapid increasing and decreasing waveform supply.
叠层发光器件性能的提高与中间电荷产生层向上下两个发光单元有效的电子、空穴注入有关。
The improvement of tandem device performance is attributed to the efficient electron and hole injection from charge generation layer to two adjacent emission units.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
通过对该模型的分析表明：ccm单元内电极间的间隙越小，电荷倍增率越大。
The analysis of this model shows that if the interelectrode gap length in the CCM elements decreases, the rate of the charge multiplication increases.
当存储器单元结构的其它部分储存不相关的信息时，读取作业将不同部分的电荷捕捉结构之间的耦合减少。
When the other parts of the memory cell stores irrelated information, read operation reduces the coupling between charge capturing structures of different parts.
介绍了开关电流电路的基本单元结构，讨论了影响故障诊断精度的主要因素，重点分析了电荷注入误差。
The basic unit structure of the SI is introduced in this paper. It also discusses the main factors which affects the precision of fault diagnosis and analyzes the charge injection error in detail.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
基于凝相机理与热解实验，从分子层面和化学反应的角度，结合价键、形式电荷、链反应等理论和固体单元推进剂的燃烧状况，提出了AP与HMX间的“连锁互动”机制。
Related to bond polarity, formal charges on atoms, chain reaction theory and the comparison of solid monopropellant combustion and modeling, the "linkage mutualism"mechanism was proposed.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
执行单元的整个机械运动m由各条支路形成的多项式链的总电荷得到。
The whole mechanical movement m of the actuator is obtained from the sum of charges of the polynomial chain formed by the branches.
通过增加存储器单元上的净正电荷以擦除存储器单元，而通过增加存储器单元上的净负电荷以编程存储器单元。
By increasing net positive charges on the memory cell, it erases the memory cell and by increasing net negative charges on the memory cell, programs the memory cell.
此外，由R1和C1构成的支路代表压电执行单元的理想电荷关系，而其它支路代表实际执行单元的材料特性。
Furthermore, the branch encompassing R1 and C1 represents the ideal charging behavior of the piezo actuator while the other branches represent the material properties of the actual actuator.
此外，由R1和C1构成的支路代表压电执行单元的理想电荷关系，而其它支路代表实际执行单元的材料特性。
Furthermore, the branch encompassing R1 and C1 represents the ideal charging behavior of the piezo actuator while the other branches represent the material properties of the actual actuator.
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