所述方法包括：使（110）存储单元呈现出对于存储单元的微结构中的变化而 言固有的多个伪随机位值；
The method comprises causing (110) the memory cells to assume a plurality of pseudo-random bit values inherent to variations in the microstructure of the memory cells;
所述方法包括：使（110）存储单元呈现出对于存储单元的微结构中的变化而 言固有的多个伪随机位值；
The method comprises causing (110) the memory cells to assume a plurality of pseudo-random bit values inherent to variations in the microstructure of the memory cells;
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