为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。

To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.

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为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。

To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.

youdao