微机械一般使用半导体衬底比如硅晶片形成。
The micro machinery commonly is formed by a semiconductor substrate such as a silicon wafer.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
切割膜框架带、减薄的半导体衬底和C4研磨带的组件。
The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced.
在半导体衬底的正面形成C4研磨带和激光烧蚀粘合层。
A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate.
实施例中，本方法包括在半导体衬底上形成栅极电介质层。
In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
在第一抛光步骤(S20)中，用含氯抛光剂抛光该化合物半导体衬底。
In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent.
本发明公开了一种电磁加热装置，主要解决半导体衬底加热不均匀问题。
The invention discloses an electromagnetic heating device and mainly solves the problem that a semiconductor underlay is heated unevenly. The device comprises a heating body and a coil.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本发明提出了一种制造用于半导体衬底叠层系统的半导体衬底结构的方法。
The invention relates to a method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system.
去除形成在该有源区域上的保护层的部分，以暴露该半导体衬底的有源区域；
The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate.
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
这些测量包括半导体衬底上的各位置处的温度和IR降、以及集成电路的频率响应。
These measurements include temperature and ir drop at locations on the semiconductor substrate, along with the frequency response of integrated circuit.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
本发明提供一种抛光垫，在抛光垫具有抛光媒质的情况下，用于抛光磁的、光学的和半导体衬底中至少一种。
The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。
The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
一种自供电低功耗集成电路芯片，其特征在于，该芯片包括一个半导体衬底以及在该衬底上的低功耗集成电路和太阳能电池；
The invention belongs to the technical field of integrated circuits, in particular to a self-powered low power consumption integrated circuit chip and a preparation method thereof.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
针对有机半导体材料的蒸发温度低的特点，设计并制作了低温辐射式加热器和衬底加热器。
A low-temperature radiation heater and substrate heater are designed and made aiming at the low evaporating temperature of organic semiconductor materials.
电压测量方法，电测试方法和装置，半导体器件制造方法和器件衬底制造方法。
Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
液滴外延生长半导体材料是一种较为新颖的MBE生长技术，而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。
Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.
半导体晶圆背面加工方法，衬底背面加工方法，和辐射固化型压敏粘着片。
Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet.
本发明公开了一种能够制备无裂的氮化物半导体自支撑衬底的方法及其专 用设备。
The invention discloses a method for preparing a self-supporting substrate of a flawless nitride semiconductor and specific device thereof.
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