半导体膜，半导体器件，和制造方法。
另外，氮化物半导体膜(11)形成的裂隙很少，从而能够大幅提高产率。
Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
制备半导体膜的固定化是解决这一问题的有效途径之一，而溶胶凝胶技术可以实现薄膜的固定化。
The immobility of semiconductor thin films is one of the effective methods to solve this problem, while sol-gel technology can realize the immobility of thin films.
如果光线被玻璃或者半导体表面反射的话，贴膜会改变其中大部分光线的方向使其重新射回太阳能板。
If light does reflect off either the glass or semiconductor surfaces, the film redirects much of it back into the solar panel.
本文研制了一种用于高精度膜厚监测的真空微量天平探头：半导体致冷器件恒温探头。
In this paper, a probe of vacuum microbalance to monitor and measure for high accuracy of film thickness is introduced, thermostatic probe of the semiconductor refrigeration device.
介绍一种实时监控行波半导体激光放大器(TW - SLA)抗反膜(AR)超低剩余反射率的新方法。
A new method of monitoring the in-situ extremely low residual reflectivity of antireflection (AR) coating of travelling-wave semiconductor laser amplifier (TW-SLA) is presented.
利用某些有机烷氧基金属化合物的热分解，可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.
理论研究导出了用微分功率输出监控半导体激光器端面减反射膜制备的主动监控法的两条原则。
Two principles have been proposed for the active monitoring method, adopted to the AR Coating semiconductor lasers and based on detecting the derivatives of the outputs from the facets to be coated.
本文综述了关于OFET的工作原理、用于OFET的半导体材料及成膜工艺等方面的新研究成果。
In this paper, the recent developments about OFET, including OFET's operating principle, organic semiconductors for OFET and the deposition technologies of the OFET's semiconductor film are reviewed.
阐述了微波在合成粉体，半导体，分子膜和载体等纳米材料的一些重要应用。
Some important application of microwave in synthesis of powders, semiconductor, membrane and supports nanophase materials were introduced.
采用完全相同的半导体激光器结构，金刚石膜热沉的热阻仅为氮化铝热沉的4 0 %。
Using a same semiconductor laser scheme, the thermal impedance of diamond thermal management is only 40% of AlN thermal management.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
切割膜框架带、减薄的半导体衬底和C4研磨带的组件。
The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced.
该半导体晶片上形成的一层互连膜与绝缘膜的可靠性可以在加速条件下加以评估。
The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.
采用转换矩阵的处理方法，对大功率半导体激光器腔面光学灾变阈值与膜层结构的关系进行了分析。
Using the transition matrix method, the relationship between the catastrophic optical damage threshold and the coating structure of semiconductor lasers were analyzed.
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
本文采用一种新的数字图像相关方法测量带有半导体电热膜的远红外陶瓷热胀系数。
A new digital image correlation method (DICM) measurement is utilized to investigate the thermal expansion coefficient of the far-infrared ceramic coated the semiconductor galvanothermy membrane.
报导了半导体薄膜CO2气体敏感膜的制备，敏感膜的结构特性、温度特性、灵敏度及响应特性和稳定度。
This paper reports the formation of the semiconductor CO2 thin-film and the structure, sensitivity, stability, temperature characteristic and response property of this sensing film.
多孔膜形成用组合物，该组合物的制备方法，多孔膜及半导体装置。
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device.
本发明的课题是提供在半导体装置制造的光刻工艺中使用的形成抗蚀剂下层膜的组合物。
The invention provides a composition for under-resist film formation which is for use in a lithographic process for producing a semiconductor device.
半导体桥(SCB)通过桥膜放电进行含能材料的点火，具有低点火能量、高安全性以及能与数字逻辑电路组合等优点。
Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
多孔膜形成用组合物，多孔膜的制备方法，多孔膜、层间绝缘膜和半导体器件。
Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device.
对如何通过研究铝的点蚀扩展动力学来预测点蚀扩展行为，同时对钝化膜的半导体性能、电子性能进行了概述。
How to predict the pit growth behavior by introducing pit growth kinetics is summarized, and some properties of passive film, such as semi conductive and electronic properties, are also discussed.
绝缘膜用材料，绝缘膜用罩光清漆，以及绝缘膜和采用该膜或该清漆的半导体装置。
Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same.
图解辅以计算研究了镀制减反射膜的半导体激光器镀膜面的有效反射。
The graphical analysis as well as numerical calculation has been used to study the effective reflectivity at antireflection coated facets of semiconductor lasers.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
本发明涉及一种半导体装配用胶粘剂膜组合物、胶粘剂膜以 及划片晶粒粘结膜。
The invention relates to an adhesive film composition for assembly of semiconductor, an adhesive film and scribing crystal particle binding film.
本发明涉及一种半导体装配用胶粘剂膜组合物、胶粘剂膜以 及划片晶粒粘结膜。
The invention relates to an adhesive film composition for assembly of semiconductor, an adhesive film and scribing crystal particle binding film.
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