该结构典型地是半导体结构。
利用本发明的方法和半导体结构，能降低W缺失的效应。
The method and the semiconductor structure provided by the invention can reduce the W loss effect.
该半导体结构包括半导体基板和所述半导体基板中的沟槽。
The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate.
张达 ZHANG DA：形成半导体结构之方法及其结构。
Method for forming a semiconductor structure and structure thereof.
在不连续的副集电极的不连续的部分之间的距离调节了半导体结构的性能特性。
The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure.
文中介绍了超晶格、量子线与量子点等低维半导体结构中的电子输运效应及其研究进展。
This paper reviews electron transport effects and study progress on low dimensional semiconductor structures such as superlattice, quantum wire and quantum dot.
在这些低维半导体结构中，除了库仑相互作用外，杂质能级还受限制势和结构尺度的影响。
In these low-dimensional structures, besides coulombic interactions, the impurity levels are affected by confining potentials and the dimension of the structures.
超深亚微米半导体结构中的局域微应力、应变的精确测量通常必须借助复杂的微结构分析、测量手段。
The accurate measurements of local micro-stress and strain in ultra deep sub-micron semiconductor structures usually resort to complicated microstructure analysis, measurement methods.
在上个世纪五十年代初期，基于半导体结构的新技术，在需要低功率放大的情况下可用晶体管替换三极管实现这一功能。
In the early 1950s, a new technology based on semiconductor construction would replace triodes with transistors, in cases where low-power amplification was needed.
本发明公开了一种形成半导体结构的方法，这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
这项技术主要告诉我们，像DNA这样的生物结构实际上能为我们在半导体加工工艺中的实际运用提供一些可再生的重复型方式。
Basically, this is telling us that biological structures like DNA actually offer some very reproducible, repetitive kinds of patterns that we can actually leverage in semiconductor processes.
华盛顿大学化学工程系的教授休•希尔豪斯说道，“它们之间并无可比性，半导体工业主要是制作微小的特定图形的硅，需要在电镜下才能看清它的复杂结构。
“It’s kind of comparing apples and oranges,” says Hugh Hillhouse, a professor of chemical engineering at the University of Washington. “The semiconductor industry makes minutely patterned silicon.
等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构，电路中各元件都有严格的物理意义。
The model is based on the semiconductor laser rate equations and the structure of the VCSEL chip, and every element in the circuit is represented.
为了处理上述挑战，IBM的 System Technology Group (STG)半导体制造部门基于集成的模块化体系结构创建了一套解决方案。
To address the above-described challenges, IBM's System Technology Group (STG) semiconductor manufacturing created solution based on an integrated modularized architecture.
纳米结构半导体具有重要的理论研究价值和潜在的应用前景。
Nanostructured semiconductor is important for both theoretical research and future application.
它的基本结构是一块电致发光的半导体材料。
And its basic structure is an electroluminescent semiconductor materials.
肯定了SOI结构在半导体电路和器件研制、生产中具有重要的发展前景。
It is confirmed in this work that SOI technology has a bright future in the area of development and production of semiconductor circuits and devices.
简要总结光电子显微术在表面结构分析，表面化学，磁学，以及半导体器件表征等方面的应用。
We briefly summarize the applications of PEEM to areas such as surface structure analysis, surface chemistry, magnetism, and semiconductor device characterization.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
介绍了半导体超细粒子的概念、结构及特性，主要是包括量子尺寸效应、体积效应、表面效应；
This thesis introduces the concept, structure and properties of semiconductor ultrafine particle (SUFP), including quantum-size effect, surface effect and volume effect et, al.
理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。
The theory research shows that the laterally tapered structure can improve the polarization sensitivity of semiconductor laser amplifier.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
利用传输矩阵法模拟了超结构光栅dbr半导体激光器的光谱特性。
The spectral characteristics of sampled superstructure grating DBR (SSGDBR) semiconductor lasers were modeled using transfer matrix method.
光子晶体由于能够产生与半导体能带结构类似的光子禁带，成为了国内外光通信和光学器件方面研究的热点。
Photonic crystals(PCs) has the properties of photonic band-gap(PBG) which is similar with semiconductor, because of this, it is a hotspot in optical communication and optical device.
为半导体器件提供结构和方法。
Structure and method are provided for semiconductor devices.
总结了该技术在近场光学存储、半导体纳米结构研究、固浸显微镜等领域内的应用。
The applications of the solid immersion lens such as near-field optical data storage, semiconductor nanostructures, solid immersion microscope and so on have been summarized.
在此论文中，我们将会呈现在三种同的二族半导体米结构系统其特有的光电性质。
In this thesis we present our studies on the optical and electrical properties of three different II-VI semiconductor nanostructure systems.
在此论文中，我们将会呈现在三种同的二族半导体米结构系统其特有的光电性质。
In this thesis we present our studies on the optical and electrical properties of three different II-VI semiconductor nanostructure systems.
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