半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
一种半导体二极管阵列，通过熔断或烧断二极管的结来实现编程过程。
A semiconductor diode array that is program med by fusing or burning out diode junctions.
一种半导体二极管阵列，通过熔断或烧断二极管的结来实现编程过程。
A semiconductor diode array that is programmed by fusing or burning out diode junctions.
但这两种半导体连接起来的时候，它们之间就形成一个P -N结。
But when these two semiconductors are connected, they form a P-N junction.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
提出了一种精确测量半导体激光器结温的方法。
An accurate method for measuring the chip temperature of semiconductor lasers is presented.
通过推导，得出一个计算化合物半导体异质结内建电势的公式。
A formula is deduced to calculate the built-in voltage of the compound semiconductor.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
半导体异质结的光学性质一直是凝聚态物理研究的热点之一。
The optical property of semiconductor heterostructures have received extensive attention in condensed matter physics in recent years.
系统分析了小尺寸半导体器件中的载流子非本地输运模型，重点研究了非均匀能带结构和异质结效应对输运电流密度的影响。
This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis.
液结太阳能电池利用敏化纳米半导体把太阳能转化为电能，具有价格低、效率高等优点，近年来已引起了越来越多研究者的广泛兴趣。
The liquid-junction solar cell is a device of converting solar energy into electric energy with the sensitized nano-particle semiconductor, which has low-cost and high-efficiency advantages.
传感器利用注入结电流直接调频的半导体激光(LD)产生外差干涉，从而实现了干涉相位的线性检测。
A heterodyne interference is caused by a frequency modulation of a laser diode (LD) with a ramp injection current, and a linear phase detection is realized.
运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。
Based on the relationship between the diffusion current and voltage of PN junction, the Boltzmann's constant is measured with high accuracy.
垂重多重结半导体器件（VMJ）有良好的近红外光电特性。
The vertical multijunction semiconductor device (VMJ) has a good infrared photoelectric characteristic.
研究了半导体非对称双异质结(ADHS)中，极化子的基态性质。
The polaron ground state in asymmetric double heterostructure (ADHS) is studied.
本文利用散射矩阵和传输矩阵等方法研究了半导体异质结量子阱和一维光晶格体系中的量子输运特性，为设计和实现具有优良性能的量子过滤器件提供理论依据。
Our arm is to explore the physical mechanisms of the effects, and to supply physical models and make theoretical validity in designing novel quantum filtering devices with better properties.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
根据非线性半导体p N结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
应用推荐