• 半导体催化剂类型作用机理应用及其性能改进综合评述

    The type, reaction mechanism and application of nano sized semiconductor photocatalyst are reviewed. The improvement of photocatalyst is also discussed in brief.

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  • 半导体激光器较之其他类型激光器功率汽化效果好、操作简单优点。

    It was pointed out that semiconductor laser has advantages such as high power, effective vaporization and simple usage than other types of lasers.

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  • 用于确定传导特性半导体材料类型晶面取向以及应变组合

    The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain.

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  • 然后基极7一部分形成包括比如发射极区的第一导电类型第二半导体区域8)。

    Thereafter a second semiconductor region (8) of the first conductivity type, comprising, for example, an emitter region, is formed on a part of the base region (7).

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  • 不同类型半导体器件之上施加应力衬里(120)。

    A single stress liner (120) is applied over different type semiconductor devices.

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  • 因此半导体行业中,必须快速准确地晶圆片导电类型方块电阻电阻进行判断、测量和分档。

    Therefore, in the semiconductor industry, we must quickly and accurately type conductive film on silicon wafers, the square resistance and resistivity of judgement, measurement, and grading.

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  • 技术改变风机世界越来越紧凑功率半导体技术,能做到两类型变频器的完美融合

    This technology can change the DFIG technology world because the power Semiconductor technology is getting more compact and this is a perfect combination.

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  • 通过霍尔效应实验测定霍尔系数能够判断半导体材料的导电类型、载流子浓度及载流子迁移率重要参数

    The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.

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  • 由此无论晶体管何种类型半导体器件可以增强电流供应能力

    Thus, the semiconductor device can enhance current supply capacity regardless of transistor type.

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  • 晶体管包括第一导电类型,该漏 极区与不同第一半导体区的第二半导体连通。

    The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.

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  • 发明所环氧树脂组合物可以有效地用于封装各种类型半导体器件晶体管集成电路

    The epoxy resin composition can be used for effectively packaging various semiconductor devices, such as transistors and integrating circuits.

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  • 形成在所半导体衬底中的与所述第一导电类型相反第二导电类型

    The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;

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  • 形成在所半导体衬底中的与所述第一导电类型相反第二导电类型

    The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;

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