对半导体光催化剂的类型、作用机理、应用及其性能改进作了综合评述。
The type, reaction mechanism and application of nano sized semiconductor photocatalyst are reviewed. The improvement of photocatalyst is also discussed in brief.
半导体激光器较之其他类型激光器有功率大、汽化效果好、操作简单等优点。
It was pointed out that semiconductor laser has advantages such as high power, effective vaporization and simple usage than other types of lasers.
用于确定此点的传导特性是半导体材料类型、晶面、取向以及应变的组合。
The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain.
然后在基极区（7）的一部分上形成包括比如发射极区的第一导电类型的第二半导体区域（8）。
Thereafter a second semiconductor region (8) of the first conductivity type, comprising, for example, an emitter region, is formed on a part of the base region (7).
在不同类型的半导体器件之上施加单应力衬里(120)。
A single stress liner (120) is applied over different type semiconductor devices.
因此，在半导体行业中，必须快速、准确地对硅晶圆片导电类型、方块电阻和电阻率进行判断、测量和分档。
Therefore, in the semiconductor industry, we must quickly and accurately type conductive film on silicon wafers, the square resistance and resistivity of judgement, measurement, and grading.
该技术能改变双馈风机世界。越来越紧凑的功率半导体技术，能做到两种类型变频器的完美融合。
This technology can change the DFIG technology world because the power Semiconductor technology is getting more compact and this is a perfect combination.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
由此，无论晶体管为何种类型，半导体器件都可以增强电流供应能力。
Thus, the semiconductor device can enhance current supply capacity regardless of transistor type.
该晶体管还包括第一导电类型的漏极区，该漏 极区与不同于第一半导体区的第二半导体区电连通。
The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.
本发明所环氧树脂组合物可以有效地用于封装各种类型的半导体器件，如晶体管、集成电路。
The epoxy resin composition can be used for effectively packaging various semiconductor devices, such as transistors and integrating circuits.
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
应用推荐