首次观察到的半导体利用电击发光要追溯到1907年。
The first observation of a semiconductor emitting light when zapped with electricity dates back to 1907.
凯若维森灯的小巧外形与发光的二极管相似，但前者比那种半导体装置发出的光更加明亮。
The lamps' small size makes them comparable to light -emitting diodes but the new lamp generates much brighter light than those semiconductor devices do.
在过去的一个世纪中，白炽灯泡一直为人造灯源的基本产品；但现在，耗能惊人的白炽灯泡注定将被由半导体驱动的发光二极管(LED)所替代。
After a century as a primary source of artificial light these energy-guzzling bulbs are set to be replaced by light-emitting diodes (LEDs), powered by semiconductors.
飞利浦于去年11月收购的一家比利时照明灯具制造商，采用LED(半导体发光二极管)固体显示技术，拥有成熟的照明系统。
PLI, the Belgian firm Philips acquired in November, makes sophisticated lighting systems, using LED solid-state displays.
同时，利用无机纳米半导体的光导特性，这种复合体系也可以制成光导与电致发光双功能器件，且其发光效率可有较大幅度提高。
Dual functions can also be achieved with high emission efficiency by benefiting from the photoconduction of the semiconductor nanocrystal and the electroluminescence of the polymer.
给出一种实现大发光面脉冲半导体激光器与标准通信光纤的高效耦合方案，实测耦合效率达21％。
A method for the high efficient power coupling of large emitting area pulsed semiconductor laser and standard communication fiber is given and its measured coupling efficiency is up to 21%.
发光二极管的核心部分是由P型半导体和N型半导体组成的晶片。
LED is the core of the P-type semiconductor and components of the N-type semiconductor chips.
欧司朗的产品组合包括各种光源产品和光电半导体光源，比如：发光二极管、相关电子镇流器控制系统和照明管理系统。
Osram's product portfolio includes lamps and optoelectronic semiconductor light sources such as light-emitting diodes, the related electronic control gear and light management systems.
本文根据半导体激光器的发光特性和棱镜的光学折射性质，设计了一组用于半导体激光系统的特殊复合整形棱镜。
A set of special compound shaping prisms has been designed for a semiconductor laser system on the basis of the luminous property of semiconductor laser and the optical refractive property of prism.
一种用于半导体发光器件的安装基板包括具有第一和第二相对金属表面的固体金属块。
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces.
利用纳米半导体的高电荷输运性，也可以增强电致发光聚合物发光层的效率。
Meanwhile, the inorganic semiconductors with high-charge transporting abilities could enhance the emission efficiency of the electroluminescent polymer emitter.
它的基本结构是一块电致发光的半导体材料。
And its basic structure is an electroluminescent semiconductor materials.
本论文分为三部分，分别为介孔材料MCM-41与半导体硫化镉的组装，MCM-41与荧光染料曙红的组装以及MCM-41与有机发光配合物铕-苯甲酸-邻菲咯啉的组装。
There are three parts in the dissertation: MCM-41 mesoporous material and semiconductor assembly, MCM-41 and fluorescence dye Eosin Y assembly, and MCM-41 and rare earth complex assembly.
采用这种结构，可以给出具有高亮度和极好显色性的半导体发光器件。
With this structure, a semiconductor light emitting device having high brightness and excellent color rendering properties can be provided.
研究表明有机半导体微腔效应可通过简单地调节有机发光层的厚度来实现。
Microcavity effect has been achieved simply by adjusting the thickness of organic light emitting layer.
该氮化物半导体发光器件具有改善了的光取出效率。
The nitride semiconductor light-emitting device has improved light extraction efficiency.
文中介绍了一种基于概率方法的半导体发光器件可靠性预计模型。
This study is a step to develop a complete physics-of-failure-based reliability prediction methodology for semiconductor light-emitting devices.
本发明提供一种半导体发光元件的制造方法，使蓝宝石晶片形成芯片时，能够以极高的成品率正确地形成芯片。
Provided is a method for manufacturing a semiconductor light emitting element, by which a sapphire wafer can be divided into chips accurately at an extremely high yield.
近几年来，宽禁带半导体材料引起人们的关注，因为这些材料在蓝光及紫外光发光二极管、半导体激光器和紫外光探测器上有重要的应用价值。
In recent years, much attention has been given to wide band gap semiconductors for the wide USES in blue and ultraviolet light emitters and detectors.
本发明的顶出光电极可以广泛应用于无机薄膜和半导体发光，以及光电器件和光探测器等方面。
The inventive ejection optical electrode can be widely used in inorganic film and semi-conductor to light, and the photoelectric device and optical detector.
半导体激光器(LD)是一种电流注入式电致发光器件，其工作特性和使用寿命主要取决于驱动电流源的性能优劣。
Laser diode (LD) is a current injected device whose characteristic and life are greatly dependent on the performance of LD-used current supply.
LED概述LED (Light EmittingDiode)，发光二极管，是一种固态的半导体器件，它可以直接把电转化为光。
LED Summary LED (light emitting diode), light-emitting diode, is a solid state semiconductor devices, which can be directly converted into electricity to light.
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。
Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.
虽然硅是一种非直接跃迁半导体，但它的发光机制同样服从于直接跃迁半导体的广义普朗克辐射定律。
Although silicon is an indirect semiconductor, light emission from silicon is governed by the same generalized Planck's radiation law as the emission from direct semiconductors.
本发明的目的是提供一种半导体器件，具体地，提供一种可通过湿法容易地制造的发光元件。
It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method.
半导体纳米晶由于量子尺寸效应和介电限域效应使它们具有独特的光致发光性能。
Semiconductor nanocrystals have unique optical and electrical properties, due to quantum size effect and dielectric confinement effect.
半导体量子点是固体发光材料中的一个新兴领域，对它的研究涉及多学科的交叉。
Semiconductor quantum dots is a new field of luminescent solid material. The research on it refers to the combination of many subjects.
发光二极管：感受电压而发射光线的半导体二极管。
Light-emitted diode (LED) : a semiconductor diode which emits light when a voltage is applied. Commonly used in its short form: LED.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
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