借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
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