内容概要 ：半导体物理基础；
本课程全面介绍了半导体物理及半导体器件的理论基础。
This course deals with the theory base of semiconductor physics and semiconductor device in detail.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
主要研究方向包括：低维半导体物理及器件、光电子器件性能预测、固态量子信息。
The studying direction: low dimensional semiconductor physics and device physics, predictive properties of optoelectronics devices and the solid state quantum information.
这是一个信息时代，是半导体物理，固体物理所支撑起来的，而它们是量子力学所决定的。
This information age, of course, came about because of semiconductors and solid-state physics, which were enabled by quantum mechanics.
半导体物理学是凝聚态物理学的一个重要分支，也是现代微电子器件工艺学的理论核心。
Semiconductor physics is recognized as one of the major areas of condensed matter physics and the core of modern micro-electronics device technology.
本课程是集成电路工程领域工程硕士的专业基础课程，旨在向学生介绍半导体物理与器件的基础知识。
This course is the key fundamental course for engineering graduates majored IC engineering, and to teach the fundamentals of semiconductor physics and devices.
本文介绍了电子显微术中一些较新的固体微区特性研究方法及其在半导体物理等固体物理分支学科中的应用。
In this paper, the new field of electron microscopy: micro-zone properties of so-lid state such as the optical, electric, magnetic, acoustic property and the deep energy level were shown.
重点分析了半导体物理效应等在光通信中的应用，同时探讨了光纤传输中的损耗、色散和非线性光学效应等重要物理问题。
Attention is focused on the implications of semiconductor physical effects, and some important physical aspects in optical fiber communication, such as attenuation, dispersion and nonlinear effects.
但是，近些年，业界共识已经发生变化，大家普遍认为，缩小现代半导体大小的进程的物理极限即将来临。
But industry consensus had shifted in recent years to a widespread belief that the end of physical progress in shrinking the size modern semiconductors was imminent.
上面的图片是普林斯顿物理学家发明的新型“光子固态”的特写镜头，它们是光半导体，而非电子半导体。
The image above is a close-up of a new "photonic solid" invented by Princeton physicists; think of it as a semiconductor of light, rather than electricity.
在20世纪60年代初，物理学家们使用半导体工业中使用的工具来从头开始创建新材料，在原子尺度上一层层地建立它们。
Beginning in the 1960s, physicists were using tools adapted from the semiconductor industry to create new materials from scratch, building them up layer-by-layer at the atomic scale.
等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构，电路中各元件都有严格的物理意义。
The model is based on the semiconductor laser rate equations and the structure of the VCSEL chip, and every element in the circuit is represented.
所谓主动元件是指通电后物理或者化学特性发生变化的元件，主动元件主要是半导体元件和显示屏。
The so-called active components, mainly composed of semiconductor and display, refer to those whose physical and chemical properties change when electrified.
它提供了一个广泛概述了科学辩论领域的光物理在有机半导体。
It provides a broad overview of the scientific debate in the field of photophysics in organic semiconductors.
致力于寻找能够解释日后在量子物理学中被称为半导体的材料，其所具有的特殊效应的科学解释。
He searched for an explanation of the effect from what was then known of the quantum physics of semiconductors.
本课程含有一个具有三个组成部分的小组设计作业，覆盖半导体的：（1）物理结构，（2）声子谱，以及（3）带结构。
This course has a three part group project assignment which covers the (1) physical structure, (2) the phonon spectra, and the (3) band structure of a semiconductor.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
用物理气相沉积法在水平系统中生长有机半导体并五苯晶体薄膜。
Physical vapor deposition in horizontal systems has been used for the growth of crystal thin-film of organic semiconductor pentacene.
半导体元件物理、物理和技术。
在现代半导体材料的X射线分析中，运动学理论由于物理思想清晰而被广泛应用。
X-ray Kinematics, characterized by its clear physical conception, is widely used in modern semiconductor material analysis.
获得充足的有机半导体的纯度和品种已导致突破固体物理和电路实现。
Access to organic semiconductors in sufficient purity and variety has led to breakthroughs in solid-state physics and circuit realization.
本文应用统计物理的方法，讨论了非晶半导体的掺杂效应，特别是在低温下的特性。
This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics.
由于半导体量子点具有零维电子特性，它不仅成为基本物理研究的重要对象，也成为研制新一代量子器件的基础。
Quantum dots (QDs), with zero-dimensional electronic properties, have stimulated great interest due to their important roles in fundamental physical research and for developing novel devices.
用密度泛函理论计算了氧分子物理吸附在半导体型单壁碳纳米管的束缚能，能带结构和吸收光谱。
The binding energy, energy band structure and optical properties of the oxygen physical adsorption on semiconducting single-wall carbon nanotube are studied by the density functional theory.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
半导体异质结的光学性质一直是凝聚态物理研究的热点之一。
The optical property of semiconductor heterostructures have received extensive attention in condensed matter physics in recent years.
II -VI族半导体量子点因其具有优异的物理特性和潜在的应用前景，引起了人们的关注。
II-VI semiconductor quantum dots have attracted much attention due to their unique physical properties and potential applications.
晶体管：用于放大、控制和生产电信号的半导体器件，是贝尔电话实验室的三位美国物理学家巴丁、布喇顿和肖克莱于1947年所发明；
Transistor: Solid-state semiconductor device for amplifying, controlling, and generating electrical signals. Invented at Bell Labs (1947) by John Bardeen, Walter H. Brattain, and William B.
理论分析表明频移幅度与调制频率、时间常数和半导体激光器的偏置电流等物理量有关。
It is made clear through the theoretical analysis that the frequency shift is dependent on the modulation frequency, thermal time constant, bias current of the laser diode and so on.
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