数值计算的结果表明，半导体光放大器在全光波长转换中具有很好的线性响应特性和较高的转换速率。
The result of numerical calculation indicates that semiconductor optic amplifier has a good responding characteristic and higher conversion rate in all-optical wavelength conversion.
半导体光放大器（SOA）由于体积小、成本低、易与其他光电器件集成，在未来的全光通信系统中将发挥重要的作用。
Semiconductor optical amplifier (SOA) is an important device in future all-optical communications due to its small volume, low cost and easy integration with other optoelectronic devices, etc.
同时，利用相位渗透理论，数值计算了垂直腔半导体光放大器（VCSOA）中的有效腔长。
The efficient cavity length of vertical cavity semiconductor optical amplifier (VCSOA) is calculated with the theory of phase penetrating.
提出和论述了一种新颖的偏振不敏感的基于半导体光放大器的四波混频光波长转换方法。
A novel scheme for polarization insensitive optical wavelength conversion based on four wave mixing (FWM) in semiconductor optical amplifier (SOA) is proposed and demonstrated.
半导体光放大器（SOA）的非线性特性在光开关、波长变换、光逻辑运算中有重要的应用。
The nonlinear characteristics of semiconductor optical amplifier (SOA) have important applications for the all-optical switching, wavelength conversion, and optical logic gate.
研究了基于半导体光放大器（SOA）的光纤环形激光器的偏振混沌光的特性及其相干性。
The characteristic of polarization chaos laser and coherence of semiconductor optical amplifier(SOA)-based fiber ring laser are investigated.
设计了一种基于半导体光放大器(SOA)和非线性光学环镜(NOLM)的光脉冲放大与压缩的模型。
A model based on semiconductor optical amplifier (SOA) and nonlinear optical loop mirror (NOLM) is designed for amplification and compression of optical pulse.
从理论上分析了各种半导体光放大器波长转换器的转换原理，并给出了它们的各种结构。
The principle of the conversion is theoretically analysed for wavelength converters with semiconductor optical amplifier, and their structures are giver.
从速率方程和多层介质膜理论出发，构建了垂直腔半导体光放大器(VCSOA)的动态传输矩阵模型。
Starting from the rate equations and the theory of multilayer dielectric film, a dynamic transfer matrix model of vertical cavity semiconductor optical amplifiers (VCSOAs) was established.
通过数值求解耦合波方程，研究了半导体光放大器弛豫时间对四波混频波长变换效率的影响。
This dissertation is devoted to effects of relaxation times on wavelength conversion efficiency based on four-wave mixing(FWM) in semiconductor optical amplifier(SOA).
理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。
The theory research shows that the laterally tapered structure can improve the polarization sensitivity of semiconductor laser amplifier.
通过考虑脉冲频谱的增益色散，提出了一个分析亚皮秒光脉冲在半导体光放大器(SOA)中传输的新思路。
We proposed a novel method to analyze the propagation of sub-picosecond optical pulses through semiconductor optical amplifiers (SOA), fully considering spectral dispersion of ultrashort pulses.
这种缓存器由光纤延迟线、光波导开关阵及非线性半导体光放大器构成。
This optical buffer is composed with optical fiber delay lines, optical waveguide switching array and nonlinear semiconductor amplifier.
报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性。
Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported.
以有源法布里-珀罗谐振腔的增益特性为基础，研究了行波半导体光放大器的偏振特性。
The polarization characteristics of Travelling-wave semiconductor optical amplifier (TW-SOA) is investigated based on th gain property of active Fabry-Perot resonator.
分析了半导体激光器的增益特性，指出了“准”行波放大器的优越性。
The gain characteristics of semiconductor laser amplifier was analyzed and advantages of quasi-TW-SLA were pointed out.
本文主要介绍用于光纤传输系统的行波半导体激光放大器(TWSLA)。
This paper mainly describes travelling wave semiconductor laser amplifiers (TWSLAs) for use in optical fiber transmission systems.
采用传输矩阵法对反射模式下的微机电可调谐垂直腔半导体光放大器的波长调谐特性进行研究。
The wavelength tuning of MEMS-based tunable vertical cavity semiconductor optical amplifiers (VCSOAs) at reflection mode are studied using transfer matrix method.
对基于半导体光放大器交叉增益调制的波长转换进行了实验研究。
The wavelength conversion based on cross gain modulation in a semiconductor optical amplifier (SOA) has been experimentally studied.
讨论了基于半导体激光放大器的波长转换器，它是光交换块中的关键元件，也是未来光通信系统中的关键元件。
Optical Wavelength converters based on semiconductor laser amplifiers are discussed, which is key components in photonic switching blocks, and also necessary devices in future optical communication.
建立了基于半导体光放大器交叉增益饱和的波长转换的理论模型。
A theoretical model of wavelength conversion based on cross gain saturation in a semiconductor optical amplifier (SOA) has been established.
介绍一种实时监控行波半导体激光放大器(TW - SLA)抗反膜(AR)超低剩余反射率的新方法。
A new method of monitoring the in-situ extremely low residual reflectivity of antireflection (AR) coating of travelling-wave semiconductor laser amplifier (TW-SLA) is presented.
基于法布里珀罗(F P)腔光束干涉理论，建立垂直腔半导体光放大器(VCSOA)的双稳模型。
Based on the beam interferential theory of Fabry-Perot semiconductor laser, a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established.
一种有源半导体器件，有三个电极，可以是放大器。
An active semiconductor device with three electrodes that may be either an amplifier or a switch.
从速率方程出发，利用小信号分析方法对垂直腔半导体光放大器(VCSOA)的频率响应特性进行了研究。
Frequency response characteristics of vertical cavity semiconductor optical amplifiers (VCSOAs) are investigated by utilizing small signal analysis method.
本文对半行波半导体激光放大器的脉冲响应及开关特性进行了实验研究。
The experimental study of the ultrashort optical pulses response and switch properties of semi-travelling-wave semiconductor laser amplifier are given in this raper.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
利用非线性量子光学效应在量子阱(QW)、量子点(QD)半导体光放大器(SOA)中得到了慢光和快光。
Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented.
这个课程模块介绍了线性放大器范围中的半导体器件的特征。
This module introduces the characteristics of semiconductor devices in a range of linear applications.
本文介绍了一种在半导体光放大器镀膜过程中监测端面反射率的简单而有效的方法。
A simple and effective method to supervise the facet reflectivity of semiconductor optical amplifier is proposed in this paper during the anti-reflectivity coating procedure.
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