一种发光元件，包括：第一导电型半导体层；
The invention discloses a light-emitting element, including a first conductivity type semiconductor layer;
还设置延伸通过半导体层并进入基区中的沟槽。
A trench is also provided, which extends through the semiconductor layer and into the base region.
将半导体层构图为位于质量体上方的十字形柔性梁。
The semiconductor layer is patterned into the flexible beam cross above the mass body.
半导体器件（10）被制造在半导体层（12）上。
The semiconductor device (10) is made over a semiconductor layer (12).
给金属层和半导体层提供电连接，还可以提供磁场施加器。
An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided.
染料增感半导体层（3）和多孔绝缘层（4）由电解质浸透。
The dye-sensitized semiconductor layer (3) and the porous insulating layer (4) are impregnated with an electrolyte.
在一实施方式中，晶体管可包括具有主表面的半导体层和传导结构。
In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure.
空穴和电子结合而形成光子，从而使得电致发光半导体层发出可见光。
The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。
The electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.
第 一电极电耦接到半导体层，第二电极在邻近沟槽的底部的位置处电耦接到基区。
The first electrode is electrically coupled to the semiconductor layer and the second electrode is electrically coupled to the base region, at a location adjacent a bottom of the trench.
止挡件通过在质量体角部的上方延伸连接件层而形成，或者通过保留半导体层而形成。
Stopper is formed by extending the connector layer, or leaving the semiconductor layer, above the mass body corners.
因此，对氧化物半导体层（905）引入比氧化物半导体层（906）更高浓度的氢。
Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.
以及已经吸收紫外线的有机半导体层的导电率低于没有吸收紫外线的有机半导体层的导电率。
Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
在柔性梁的交叉区域中和在支撑体的上方的环形区域中对SOI的半导体层和中间绝缘层进行蚀刻。
The semiconductor layer and intermediate insulator of the SOI are etched in crossed region of the flexible beam cross and in a looped region above the support body.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
它由两层半导体晶硅材料合在一起夹在金属接触器之间。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
他们能穿透防护层并寄居在半导体中，在那里，它们能产生破坏电子器件的电涌。
They penetrate shielding and get deposited in semiconductors, where they can create electrical surges that damage electronics.
人造叶子主要是一层很薄的半导体硅板，能够将太阳光转化为硅板内的无线电流，硅也是大部分太阳能电池的主要材料。
The artificial leaf is a thin sheet of semiconducting silicon - the material most solar cells are made of - which turns the energy of sunlight into a flow of wireless electricity within the sheet.
在20世纪60年代初，物理学家们使用半导体工业中使用的工具来从头开始创建新材料，在原子尺度上一层层地建立它们。
Beginning in the 1960s, physicists were using tools adapted from the semiconductor industry to create new materials from scratch, building them up layer-by-layer at the atomic scale.
在陶瓷基片上淀积了薄薄一层半导体。
A thin layer of semiconductor is deposited on a ceramic base.
金属中的电子必须克服这个势垒层才能进入半导体。
Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.
多孔膜形成用组合物，多孔膜的制备方法，多孔膜、层间绝缘膜和半导体器件。
Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
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