高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
半导体器件。分立器件和集成电路。第8部分：场效应晶体管。
Semiconductor devices. Discrete devices and integrated circuits. Part 8: field-effect transistors.
然而，有机场效应晶体管性能的快速进步，主要得益于新型有机半导体材料方面的研究进展。
However, the rapid improvements of OFET's performances mostly profit from research achievements in new organic semiconductor materials.
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
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