本课程全面介绍了半导体物理及半导体器件的理论基础。
This course deals with the theory base of semiconductor physics and semiconductor device in detail.
日本半导体工业在世界上的领先地位为其研制有源相控阵雷达提供了扎实的器件基础。
The world leading place in semiconductor industry made Japan have a solid foundation of components for active phased array radar development.
本文在对半导体器件模拟过程分析的基础上，提出了目前广为流行的器件模拟软件面向对象的设计和开发方法。
Based on the analysis of the semiconductor device simulation procedure, this paper proposed a popular design method of the device simulation software.
由于半导体量子点具有零维电子特性，它不仅成为基本物理研究的重要对象，也成为研制新一代量子器件的基础。
Quantum dots (QDs), with zero-dimensional electronic properties, have stimulated great interest due to their important roles in fundamental physical research and for developing novel devices.
在电子类产品中，半导体器件是电路中最基础的、最重要的组成部分之一。
Semiconductor is one of the most fundamental and important constituent of circuit in the electronic product.
本课程是集成电路工程领域工程硕士的专业基础课程，旨在向学生介绍半导体物理与器件的基础知识。
This course is the key fundamental course for engineering graduates majored IC engineering, and to teach the fundamentals of semiconductor physics and devices.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
因此只有通过对稀磁半导体材料微结构与物理特性的系统、深入研究才能获得关于材料性能的清晰理解，为器件研制打下坚实的基础。
Only by systematic and deep research on the microstructure and physical characteristics of DMS, the follow work on devices can be carried out.
本文的研究内容属于半导体器件抗辐射问题的基础，这正是本文开展此项研究的意义所在。
We will make the solid basis for studying the problem of radiation tolerance, that is the significance of studying in this paper.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
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