该氮化物半导体发光器件具有改善了的光取出效率。
The nitride semiconductor light-emitting device has improved light extraction efficiency.
文中介绍了一种基于概率方法的半导体发光器件可靠性预计模型。
This study is a step to develop a complete physics-of-failure-based reliability prediction methodology for semiconductor light-emitting devices.
采用这种结构，可以给出具有高亮度和极好显色性的半导体发光器件。
With this structure, a semiconductor light emitting device having high brightness and excellent color rendering properties can be provided.
一种用于半导体发光器件的安装基板包括具有第一和第二相对金属表面的固体金属块。
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces.
同时，利用无机纳米半导体的光导特性，这种复合体系也可以制成光导与电致发光双功能器件，且其发光效率可有较大幅度提高。
Dual functions can also be achieved with high emission efficiency by benefiting from the photoconduction of the semiconductor nanocrystal and the electroluminescence of the polymer.
本发明的目的是提供一种半导体器件，具体地，提供一种可通过湿法容易地制造的发光元件。
It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method.
本发明的顶出光电极可以广泛应用于无机薄膜和半导体发光，以及光电器件和光探测器等方面。
The inventive ejection optical electrode can be widely used in inorganic film and semi-conductor to light, and the photoelectric device and optical detector.
半导体元件，有机晶体管，发光器件，和电子器件。
Semiconductor element, organic transistor, light-emitting device, and electronic device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
LED概述LED (Light EmittingDiode)，发光二极管，是一种固态的半导体器件，它可以直接把电转化为光。
LED Summary LED (light emitting diode), light-emitting diode, is a solid state semiconductor devices, which can be directly converted into electricity to light.
半导体激光器(LD)是一种电流注入式电致发光器件，其工作特性和使用寿命主要取决于驱动电流源的性能优劣。
Laser diode (LD) is a current injected device whose characteristic and life are greatly dependent on the performance of LD-used current supply.
半导体激光器(LD)是一种电流注入式电致发光器件，其工作特性和使用寿命主要取决于驱动电流源的性能优劣。
Laser diode (LD) is a current injected device whose characteristic and life are greatly dependent on the performance of LD-used current supply.
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