介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
本文论述了大功率列阵半导体激光器组侧泵浦YAG激光器的工作原理，在此基础上进行设计、制作并对激光器进行调试和性能参数测量。
The theory of side pumping Nd:YAG laser by high-power array-semiconductor laser cluster are discussed, on the basis of this theory, we design, make and justify the laser, and measure its data.
半导体激光器特性参数测量系统由激光器、PC机、LD检测仪和其他仪器组成。
The measurement system of LD was made up of PC and measurement instrument of LD and other measurement devices.
本文主要利用第一类方法，对半导体激光器阵列的稳态热阻进行测量，并详细介绍了半导体激光器各个参数的测量方法。
In this article, we used the first method to test the stable thermal resistance, and we introduced some testing methods to test the parameters of semiconductor lasers.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文分析了当前已有的半导体激光器检测系统的特点和存在的不足，提出了一种能够测量激光器各种参数的测量系统。
The paper analyzed the characters and the disadvantages of the existed LD characteristic detection system and puts forward the main functions of the detection systems.
通过对基于脉冲激光测距原理的半导体脉冲激光器的参数测量分析，研究了半导体脉冲激光的发射和接收。
The emission and receive of semiconductor pulse laser are researched, based on the laser rangefinder theory, parameter measure and character analyzing of semiconductor pulse laser.
半导体激光器的性能指标主要依靠测量技术来保证，因此对半导体激光器参数的测量具有重大意义和研究价值。
The performance index of LD primarily depends on the testing technology to be ensured. So it is significant and worth studying that testing the characteristics.
半导体激光器的性能指标主要依靠测量技术来保证，因此对半导体激光器参数的测量具有重大意义和研究价值。
The performance index of LD primarily depends on the testing technology to be ensured. So it is significant and worth studying that testing the characteristics.
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